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| RURG30120 Data Sheet January 2000 File Number 3399.3 30A, 1200V Ultrafast Diode The RURG30120 is an ultrafast diode with soft recovery characteristic (trr < 110ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formally developmental type TA49031. Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RURG30120 PACKAGE TO-247 BRAND RURG30120 Packaging JEDEC STYLE 2 LEAD TO-247 ANODE CATHODE (BOTTOM SIDE METAL) CATHODE NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURG30120 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 110oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figure 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1200 1200 1200 30 60 300 125 30 -65 to 175 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RURG30120 Electrical Specifications SYMBOL VF IF = 30A IF = 30A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 30A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 90 45 MAX 2.1 1.9 250 1 110 150 1.2 UNITS V V A mA ns ns ns ns oC/W Typical Performance Curves 200 100 IF , FORWARD CURRENT (A) 500 100 IR, REVERSE CURRENT (A) 175oC 10 175oC 10 100oC 25oC 1.0 100oC 0.1 0.01 25oC 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, FORWARD VOLTAGE (V) 0.001 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RURG30120 Typical Performance Curves 150 125 (Continued) IF(AV) , AVERAGE FORWARD CURRENT (A) 40 30 100 t, TIME (ns) trr DC 75 20 ta 50 25 0 1 10 IF , FORWARD CURRENT (A) 30 SQ. WAVE 10 tb 0 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT I = 1.225A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 |
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